| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve yield and a property of the semiconductor device by preventing a bridge with a bit line and a storage electrode contact. CONSTITUTION: A bit line with a spacer is formed on the upper side of the semiconductor substrate. A conductive layer(122) is buried between the bit lines. The photosensitive pattern exposing a region between gate lines including a bit line contact is formed on the upper side of the conductive layer. A storage electrode contact(132) is formed by etching the conductive layer using the photosensitive pattern as an etch mask.
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