| 摘要 |
The semiconductor device according to the present invention comprises a plurality of actually operative capacitors 36 a formed, arranged in an actually operative capacitor part 26 over a semiconductor substrate 10 and each including a lower electrode 30 , a ferroelectric film 32 and an upper electrode 34 ; a plurality of dummy capacitors 36 b formed, arranged in a dummy capacitor part 28 provided outside of the actually operative capacitor part 26 over the semiconductor substrate 10 and each including the lower electrode 30 , the ferroelectric film 32 and the upper electrode 34 ; a plurality of interconnections 40 respectively formed on said plurality of the actually operative capacitors 36 a and respectively connected to the upper electrodes 34 of said plurality of the actually operative capacitors 36 a; and the interconnections 40 respectively formed on said plurality of the dummy capacitors 36 b, the ratio of the pitch of the dummy capacitors 36 b to the pitch of the actually operative capacitors 36 a being in the range of 0.9-1.1, and the ratio of the pitch of the interconnections 40 formed over the dummy capacitors 36 b to the pitch of the interconnections 40 formed over the actually operative capacitors 36 a being in a range of 0.9-1.1. |
