| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure capable of making a propagation speed of signal fast. <P>SOLUTION: The semiconductor device has a structure of a stack of a plurality of substrates 1 each having a recessed portion 3 formed on a first principal surface, a first terminal 4 formed on a bottom surface of the recessed portion 3, and a second terminal 6 formed on a second principal surface 5 opposed to the first principal surface 2. With respect to substrates 1 which are vertically adjacent to each other among the plurality of substrates 1, a first terminal 4 of the lower first substrate 1 and a second terminal 6 of the upper second substrate 1 are electrically connected to each other through a projection electrode 7, and a space 10 is present between the projection electrode 7 and an inner wall of a recessed portion 3 of the fist substrate 1 or an edge of an opening of the recessed portion 3. <P>COPYRIGHT: (C)2010,JPO&INPIT |
