| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to obtain a thin film transistor with superior reliability by forming barrier layers with aluminum oxide or second conductive layers with a high melting point between an oxide semiconductor layer and first conductive layers. CONSTITUTION: An oxide semiconductor layer(113) includes indium, gallium and zinc. First conductive layers(114a, 114b) include aluminum. Second conductive layers(115a, 115b) include metal material with a high melting point on the first conductive layers. Barrier layers(116a, 116b) include aluminum oxide. The barrier layers are formed on the end of the first conductive layers. The oxide semiconductor layer is closely installed to the second conductive layers and the barrier layers. |
