发明名称 |
METHOD OF FABRICATING OXIDE THIN FILM TRANSISTOR |
摘要 |
PURPOSE: A method of manufacturing a oxide TFT(Thin Film Transistor) is provided to prevent characteristic deterioration of a oxide semiconductor by using silicon nitride film as a protective layer of the oxide semiconductor. CONSTITUTION: A gate electrode(121) is formed on substrate. A gate insulating layer(151a) is formed on the gate electrode. An active layer consisting of the amorphous zinc oxide type semiconductor(124) is formed on the gate insulating layer. Source/drain electrodes(122,123) is connected with fixed region of the active layer. The second protective layer is formed on the first protective layer.
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申请公布号 |
KR20100040604(A) |
申请公布日期 |
2010.04.20 |
申请号 |
KR20080099814 |
申请日期 |
2008.10.10 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
SEO, HYUN SIK;BAE, JONG UK;KIM, DAE HWAN |
分类号 |
G02F1/136;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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