发明名称 |
Integrated Circuit with a Contact Structure Including a Portion Arranged in a Cavity of a Semiconductor Structure |
摘要 |
An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.
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申请公布号 |
US2010090285(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20080251864 |
申请日期 |
2008.10.15 |
申请人 |
QIMONDA AG |
发明人 |
GRAF WERNER;FITZ CLEMENS |
分类号 |
H01L27/088;H01L21/76;H01L23/48 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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