PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase change memory device capable of properly controlling the heat radiation performance of a phase change region in writing information. SOLUTION: The phase change memory device 1 includes: a phase change region 15a; a first insulating layer 13 disposed below the phase change region 15a so as to contact the phase change region 15a; and a conductor layer 11 disposed below the first insulating layer 13 so as to contact the first insulating layer 13 and having at least partially disposed immediately below the phase change region 15a. The conductor layer 11 works as a heat sink of the phase change region 15a. COPYRIGHT: (C)2010,JPO&INPIT