| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which solves problem points associated with on-current and off-current of the thin film transistor, and with which operation at a high speed is attainable. SOLUTION: The thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen, NH group or NH<SB>2</SB>group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared with a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared with a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. COPYRIGHT: (C)2010,JPO&INPIT |
