发明名称 |
SRAM CELL WITH T-SHAPED CONTACT |
摘要 |
An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. The drain connecting segments may also extend beyond gate connecting segments by a distance greater than one-third of the width of the gate connecting segments. A process of forming an integrated circuit containing an array of SRAM cells with T-shaped contacts in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. A process may also form the drain connecting segments to extend beyond gate connecting segments by greater than one-third of the width of the gate connecting segments. |
申请公布号 |
US2012258593(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201213530410 |
申请日期 |
2012.06.22 |
申请人 |
HOUSTON THEODORE W.;ATON THOMAS J.;JESSEN SCOTT W.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W.;ATON THOMAS J.;JESSEN SCOTT W. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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