| 摘要 |
<PICT:0806923/III/1> A semi-conductor device comprises a mixed crystal consisting of either at least one from Group III and at least two elements from Group V, or, at least one from Group III and at least two from Group III. The preferred elements are B, Al, Ga and In (Group III) and N, P, As, Sb (Group V). The use of the crystal in applications such as transistors (junction and PIN type), rectifiers thermistors, photo-electric devices, photo-modulators, photo-luminescent devices, magnetically variable resistors, Hall effect devices, and optical filters is described. Reference is made to (InxGa7-x)Sb1 from In Sb and GaSb, (InxGa1-x)As1 from InAs and Ga As, (InxGa1-x)P1 from In P and Ga P, In, (AsyP1-y), and Ga, (AsyP1-y). Fig. 7 shows apparatus which may be used for preparation of a mixed crystal composed, for example, of In, As and P. 15 gms. of In are placed in quartz boat 22, and 7.883 gms. As with 0.86 gms. P are placed at 23 in a quartz ampoule 21 in a nitrogen atmosphere. A two-temperature method of melting is used, as described in Specification 786,818, in which the In is heated to about 960 DEG C. by coils 24 and the As and P to about 700 DEG C. by coils 25, 26, which is at least equal to the condensing temperature of As and P. The melt may be solidified from one end to provide a crystal containing more P at first, and then more As in the last portion to solidify. Alternatively a more homogeneous crystal may be obtained by solidifying rapidly and then subsequently zone melting, preferably in two successive and opposingly directed steps. Alternatively, the individual compounds In As and In P may first be produced by the method similar to that above, after which the compounds are mixed in correct proportions and melted together, utilizing the apparatus of Fig. 7. Monocrystals may be pulled from a melt of the compound mixture. The description includes data as to value and temperature on the conductivity, energy gaps, Hall coefficients, mobilities and absorption spectra, of various mixed crystals, particularly those containing different proportions of In, As and P. Specifications 719,873, 750,134 and 797,505, [all in Group XXXVI], also are referred to. Reference has been directed by the Comptroller to Specification 766,671, [Group II].
|
