| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a high-quality silicon oxide film, which does not practically contain hydrogen and has high insulation quality, by a plasma CVD method. Ž<P>SOLUTION: The plasma CVD apparatus introduces a microwave into a treatment container by a flat antenna having multiple pores and generates plasma, wherein the pressure inside the treatment container is set within the range of ≥0.1 Pa and ≤6.7 Pa, and plasma CVD is done by use of an SiCl<SB>4</SB>gas or a processing gas including an Si<SB>2</SB>H<SB>6</SB>gas and an oxygen-containing gas, thus forming a dense, excellent insulation, high-quality silicon oxide film (SiO<SB>2</SB>film or SiON film) in which an etching rate by a 0.5% dilute hydrofluoric acid solution is ≤0.11 nm/s. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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