TRIPLE-GATE OR MULTI-GATE COMPONENT BASED ON THE TUNNELING EFFECT

摘要

Disclosed is a triple-gate or multi-gate component based on the quantum mechanical tunneling effect. Said component comprises at least two tunneling electrodes (1a, 1b) on a substrate that are separated by a gap through which electrons can tunnel. Means can be provided for applying an electric field to the gap, said electric field having a field component that extends perpendicular to the direction of the tunneling current between the tunneling electrodes and parallel to the substrate. Such an electric field represents a great inverse amplification factor for the tunneling probability and thus the tunneling current that is to be controlled. Such a triple-gate or multi-gate component can act as a very quickly switching transistor having high amplification and does not have to be semiconducting.