| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which increases a work function of a gate electrode on a gate insulator film and has a low threshold voltage. SOLUTION: The semiconductor device 1 includes: a substrate (silicon substrate 2); the gate insulator film 4 provided on the silicon substrate 2; and the gate electrode (Ni<SB>3</SB>Si electrode 19 including Pt) provided on the gate insulator film 4. In the semiconductor device, the Ni<SB>3</SB>Si electrode 19 including Pt includes a first metal silicide including a first metal, and a second metal silicide including a second metal or the second metal, on a part where the gate insulator film 4 and the Ni<SB>3</SB>Si electrode 19 including Pt come into contact with each other, and the second metal silicide including the second metal is a metal-rich silicide in which a composition ratio of the second metal with respect to silicon in the second metal silicide including the second metal is larger than 1. COPYRIGHT: (C)2010,JPO&INPIT |
