发明名称 |
Device fabrication by anisotropic wet etch |
摘要 |
A method of fabrication and a field effect device structure are presented that reduce source/drain capacitance and allow for device body contact. A Si based material pedestal is produced, the top surface and the sidewalls of which are oriented in a way to be substantially parallel with selected crystallographic planes of the pedestal and of a supporting member. The pedestal is wet etched with an anisotropic solution containing ammonium hydroxide. The sidewalls of the pedestal become faceted forming a segment in the pedestal with a reduced cross section. The dopant concentration in the reduced cross section segment is chosen to be sufficiently high for it to provide for electrical continuity through the pedestal.
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申请公布号 |
US7696539(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20080141878 |
申请日期 |
2008.06.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI YUJUN;SETTLEMYER, JR. KENNETH T.;BEINTNER JOCHEN |
分类号 |
H01L29/80 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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