SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLASMA CVD APPARATUS

摘要

For the purpose of forming a dense high-quality silicon oxide film (SiO2 film or SiON film) having excellent insulating properties and an etching rate by a 0.5% dilute hydrofluoric acid solution of not more than 0.11 nm/sec, plasma CVD is carried out using a process gas containing an SiCl4 gas or Si2H6 gas and an oxygen gas, by using a plasma CVD apparatus wherein a plasma is generated by introducing microwaves into a process chamber through a planar antenna having a plurality of slots, while setting the pressure within the process chamber to not less than 0.1 Pa but not more than 6.7 Pa.