| 摘要 |
Disclosed is a high-purity copper characterized in that the high-purity copper has a purity of not less than 6 N, the contents of P, S, O, and C components are each not more than 1 ppm, and the number of nonmetallic inclusions having a particle diameter of 0.5 to 20 µm contained in the copper or the copper alloy is not more than 10,000 particles/g. In the high-purity copper, a reduction in breaking of a bonding wire, an improvement in reproducibility of mechanical strength, or a reduction in the percentage defective of wiring of a semiconductor device formed by sputtering of a high-purity copper target with high reproducibility can be realized by using a high-purity copper and a high-purity copper alloy with a lowered content of harmful P, S, C, and O inclusions as a raw material and regulating the existence form of nonmetallic inclusions. |
