| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell excellent in data holding characteristics and writing characteristics and configurable with a simple circuit. SOLUTION: The semiconductor memory device having a read-only word line WLR for selecting a memory cell MC 3 to read cell information and a read-only bit line BLRz for reading cell information from the selected memory cell includes the memory cell MC 3 including a cell part C for holding the cell information and a pair of transistors TN 11 and TN 12 for connecting a pair of output nodes N1 and N2 of the cell part to a write-only word line WLx to which a power supply voltage is supplied during a writing operation, and a pair of write-only bit lines BLx and BLz for inputting a complimentary signal as write data to the gates of the pair of transistors TN 11 and TN 12. COPYRIGHT: (C)2010,JPO&INPIT |
