| 摘要 |
PURPOSE: An image sensor and a manufacturing method of an image sensor are provided to improve the operation reliability of an image sensor since a high temperature annealing is not necessary. CONSTITUTION: A semiconductor substrate(100) has a photo diode(110) and a transistor(120). More than one interlayer dielectric layer(130) are formed on the semiconductor substrate. The interlayer insulating layer comprises a contact plug and a metal wiring. The first protective layer(140) is formed on the interlayer dielectric layer. A metal layer(150) is formed on the first protective layer and functions a light-shielding layer. A second protective layer(160) is formed on the metal layer. A micro lens(170) is formed on the second protective layer which vertically corresponds to a photo diode.
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