发明名称 Verfahren zum Herstellen einer Halbleitervorrichtung
摘要 A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.
申请公布号 DE102006062029(B4) 申请公布日期 2010.04.08
申请号 DE20061062029 申请日期 2006.12.29
申请人 MITSUBISHI ELECTRIC CORP. 发明人 MATSUMURA, TAMIO;TSUJINO, TADASHI
分类号 H01L21/283;H01L21/324 主分类号 H01L21/283
代理机构 代理人
主权项
地址