发明名称 |
Verfahren zum Herstellen einer Halbleitervorrichtung |
摘要 |
A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step. |
申请公布号 |
DE102006062029(B4) |
申请公布日期 |
2010.04.08 |
申请号 |
DE20061062029 |
申请日期 |
2006.12.29 |
申请人 |
MITSUBISHI ELECTRIC CORP. |
发明人 |
MATSUMURA, TAMIO;TSUJINO, TADASHI |
分类号 |
H01L21/283;H01L21/324 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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