发明名称 |
Multi-bit resistive memory |
摘要 |
A memory includes a first multi-bit resistive memory cell and a single bit resistive memory cell. The single bit resistive memory cell is for storing a bit indicating whether data stored in the first multi-bit resistive memory cell is inverted.
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申请公布号 |
US7692949(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20060633210 |
申请日期 |
2006.12.04 |
申请人 |
QIMONDA NORTH AMERICA CORP. |
发明人 |
NIRSCHL THOMAS |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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