| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having excellent characteristics, and to provide a method for manufacturing the same. <P>SOLUTION: The photoelectric conversion device includes nanocrystal grains (d) and a semiconductor layer, wherein the each nanocrystal grain (d) is composed of a first semiconductor and the semiconductor layer includes a first semiconductor layer (7) containing the nanocrystal grains (d) in a second semiconductor amorphous layer. The first semiconductor and a second semiconductor are the same semiconductor. In the configuration, a quantum well caused by a band gap difference between the nanocrystal grain (d) and the amorphous layer of the semiconductor composing the nanocrystal grain (d) is formed, so that the photoelectric conversion device having a high photoelectric conversion rate can be obtained. Particularly by using the same material having different crystallinity, the band gap difference is made comparatively small and the depth of the quantum well can be shallowed. Consequently carrier can be easily extracted and device characteristics are improved. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
