| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress data corruption of static memory cells due to variation in an operating power source by suppressing a sub-threshold leak current. Ž<P>SOLUTION: The semiconductor integrated circuit includes: a pair of power source wirings (10, 11), a plurality of static memory cells (18), a voltage control circuit (20) for controlling an operation voltage to be applied to the static memory cells from the power source wiring, a monitor circuit (21) for monitoring the voltage of the power source wiring, and a mode control circuit (5) for controlling an operation mode. The monitor circuit detects variation of reducing a potential difference between the pair of power source wirings. The voltage control circuit decreases the potential difference between a pair of power source nodes of the static memory cells in response to an instruction of a low power consumption mode by the mode control circuit, and increases the potential difference between a pair of power source nodes of the static memory cells in response to the detection of reduction in the potential difference between the pair of power source wirings by the monitor circuit. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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