发明名称 |
PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS |
摘要 |
A memory device as described herein includes a memory member contacting first and second interface structures. The first interface structure electrically and thermally couples the memory member to access circuitry and has a first thermal impedance therebetween. The second interface structure electrically and thermally couples the memory member to a bit line structure and has a second thermal impedance therebetween. The first and second thermal impedances are essentially equal such that applying a reset pulse results in a phase transition of an active region of the memory member spaced away from both the first and second interface structures.
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申请公布号 |
US2010072447(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20090625433 |
申请日期 |
2009.11.24 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG LAN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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