| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can control degradation in performance of the device. <P>SOLUTION: The semiconductor device includes: an SiC substrate 11; an AlGaN layer 13 formed on the SiC substrate 11; a source electrode 15 and a drain electrode 14 formed on the AlGaN layer 13 with a space from each other; a first insulating film 17 formed between these source electrode 15 and drain electrode 14, and having an opening 16 which is parallel to the source electrode 15 and drain electrode 14; a gate electrode 18 formed in the opening 16 of the first insulating film 17; a second insulating film 19 formed on the first insulating film 17 on which the gate electrode 18 is formed; and a source field plate electrode 20 which is formed on the second insulating film 19 and the source electrode 15 and whose end 201 of the drain electrode 14 side is apart from the second insulating film 19. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
