| 摘要 |
A method for pulsed plasma deposition of titanium dioxide film is revealed. The method includes the steps of: (1) set a substrate into a chamber and the chamber is pumped down to a certain vacuum level. (2) Introduce titanium tetraisopropoxide gas and gas containing oxygen into the chamber and a RF (radio frequency) pulse power supply is turned on to create a glow discharge for generating pulsed plasma. (3) A layer of titanium dioxide film is deposited on the substrate by the pulsed plasma. The TiO2 film is deposited on a substrate such as plastic substrate at low temperature according to the method so that the heat-resistant and conductive requirements of conventional substrates are removed.
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