| 摘要 |
<p>A semiconductor light-emitting element, wherein the crystallinity of a substrate is improved, thereby suppressing optical loss and deterioration in the state of crystals. As a result, the semiconductor light-emitting element can endure increases in output and efficiency. A method for manufacturing a semiconductor light-emitting element wherein a semiconductor layer is arranged on a crystal growth surface of a substrate, said method being characterized by having a step wherein a crystal quality-improving layer is formed on the back surface of the substrate.</p> |
