发明名称 |
Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion |
摘要 |
In accordance with the present teachings, semiconductor devices and methods of making semiconductor devices and dielectric stack in an integrated circuit are provided. The method of forming a dielectric stack in an integrated circuit can include providing a semiconductor structure including one or more copper interconnects and forming an etch stop layer over the semiconductor structure in a first processing chamber. The method can also include forming a thin silicon oxide layer over the etch stop layer in the first processing chamber and forming an ultra low-k dielectric layer over the thin silicon oxide layer in a second processing chamber, wherein forming the thin silicon oxide layer improves adhesion between the etch stop layer and the ultra low-k dielectric as compared to a dielectric stack that is devoid of the thin silicon oxide layer between the etch stop layer and the ultra low-k dielectric.
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申请公布号 |
US7682989(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20070750669 |
申请日期 |
2007.05.18 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MATZ LAURA M.;TSUI TING Y.;BRIGGS THAD E.;KRAFT ROBERT |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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