| 摘要 |
PURPOSE: The storage node of a semiconductor device and a method for manufacturing the same are provided to obtain a highly integrated semiconductor device by forming the storage node for the highly integrated semiconductor device using a nano-wire layer formation process and a selective epitaxial growth process. CONSTITUTION: Interlayer insulation layers(121, 129) is manufactured by forming a sub-structure on a semiconductor substate(111). A nano-wire layer is connected through the interlayer insulation layer. An epi-layer(137) is grown on the surface of the nano-wire layer in order to form a storage node. The sub-structure includes a gate and bit lines. The nano-wire layer is upwardly protruded from the interlayer insulation layer.
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