| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress separation and cracks of a passivation film by relaxing stress operating between the passivation film and a rewiring layer according to a difference in a thermal coefficient of expansion of a resin section, a metal section, and the like in a WL-CSP type semiconductor device. <P>SOLUTION: The area of a section in parallel with the lamination direction of a semiconductor device in a rewiring pedestal for fixing a post to the rewiring layer is reduced at the passivation film side than a post side, thus reducing the area of the contact surface of the rewiring pedestal and the passivation film while securing area for connecting the post to the rewiring pedestal. While securing a connection margin between the post and the rewiring pedestal, stress operating between the passivation film and the rewiring layer is relaxed, thus suppressing separation and cracks of the passivation film. Also, thermal stress operating on an external terminal is dispersed also to the rewiring pedestal while a semiconductor device has been packaged on a packaging substrate, thus improving durability in the external terminal. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
