NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate that has low resistance and is excellent in crystallinity of a nitride semiconductor single-crystal layer without forming an SiNxlayer between an Si substrate and the nitride semiconductor single-crystal layer formed thereupon, and to provide a method of manufacturing the same. Ž

SOLUTION: The nitride semiconductor substrate is manufactured through the processes of: forming a metal film consisting of one or more kinds between Ti and V on an Si (111) substrate 1; forming a nitride intermediate layer 2 consisting of one or more kinds among TiN, VN and a compound of the both by nitriding the metal film; and forming the nitride semiconductor single-crystal layer 3 consisting of one or more kinds among GaN (0001), AlN (0001) and InN (0001) on the nitride intermediate layer. Ž

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