| 摘要 |
PROBLEM TO BE SOLVED: To provide a display apparatus capable of further reducing an OFF current and stabilizing the operation in a thin-film transistor consisting of a metal oxide semiconductor provided in the display apparatus. SOLUTION: A display apparatus has a thin-film transistor in which a metal oxide semiconductor layer is served as a semiconductor layer, on a substrate. A silicon nitride film is formed between the substrate and the thin-film transistor as a barrier layer. A gate insulating film of the thin-film transistor consists of the silicon nitride film formed by the plasma CVD method. COPYRIGHT: (C)2010,JPO&INPIT |
