METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor element that suppresses a cutoff current while holding high channel mobility. SOLUTION: The method of manufacturing the field-effect transistor 1 comprising a group III semiconductor includes laminating a p-type GaN layer 5 on an n-type GaN layer 4 and laminating an n-type GaN layer 6 on the p-type GaN layer 5. Then a laminate structure portion 3 which has a wall surface 8 ranging from the n-type GaN layer 4 to the n-type GaN layer 6 is formed by etching. In a nitrogen atmosphere, the laminate structure portion 3 is subjected to annealing processing for activating p-type impurities. COPYRIGHT: (C)2010,JPO&INPIT