| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspecting method for a semiconductor device that detects misalignment of a well with a field insulating film electrically with high precision. Ž<P>SOLUTION: A first well 30 of a first type transistor 103 including the first well 30 of a first conductivity type formed on a semiconductor substrate 10 of the first conductivity type, a second well 32 of a second conductivity type formed across the first well 30, a source region 40a and a drain region 40b formed at the second well 32, and an offset insulating film 22 formed between the first well 30, and source region 40a and drain region 40b is displaced in a first direction from an intermediate 40c between the source region 40a and drain region 40b, and a first well 30 of a second type transistor 203 is displaced in the opposite direction from the first direction. Thresholds of the first transistor 103 and second transistor 203 are measured to detect misalignment of the offset insulating film 22 with the border between the first well 30 and second well 32. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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