| 摘要 |
According to one disclosed embodiment, a semiconductor package for integrated passives and a semiconductor device comprises a high permeability structure formed over a surface of the semiconductor package and surrounding a contact body of the semiconductor package, the contact body being connected to an output of the semiconductor device. The contact body can be, for example, a solder bump. The high permeability structure causes a substantial increase in inductance of the contact body so as to form an increased inductance inductor coupled to the output of the semiconductor device. In one embodiment, the semiconductor package further comprises a blanket insulator formed over the high permeability structure, and a capacitor stack formed over the blanket insulator. In one embodiment, the semiconductor device comprises a group III-V power semiconductor device.
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