发明名称 |
METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT |
摘要 |
<p>In some aspects, a method of forming a memory cell is provided that includes forming a first conductor above a substrate; forming a diode above the first conductor; forming a reversible resistance-switching element above the first conductor using a selective deposition process; and forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.</p> |
申请公布号 |
EP2162916(A2) |
申请公布日期 |
2010.03.17 |
申请号 |
EP20080779800 |
申请日期 |
2008.06.27 |
申请人 |
SANDISK 3D LLC |
发明人 |
SCHRICKER, APRIL;HERNER, S., BRAD;KONEVECKI, MICHAEL |
分类号 |
H01L21/822;H01L27/10 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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