| 摘要 |
PURPOSE: A method for fabricating a nonvolatile memory device is provided to improve data retention property by removing reaming oxygen formed on an interface between a trap nitride film and a silicon oxide film. CONSTITUTION: A tunneling insulating layer(21), a charge trap layer(22), a blocking insulating layer(23), gate electrode layers(24,25), and a gate hard disk layer(26) are laminated on a substrate(20). The gate hard mask layer, the gate electrode layer, the blocking insulation layer, and the charge trap layer are patterned. The silicon oxide film is formed on the side of the patterned charge trap layer. The silicon oxide film is formed through a re-oxidation process. The residual oxygen which is silicon oxynitride is generated in the border of the charge trap layer and a silicon oxide film. The residual oxygen is removed.
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