| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress deterioration in performance of a photoelectric conversion portion by improving operation speed by applying an oxynitride film to a gate insulation film of MOS transistors of a peripheral circuit portion. <P>SOLUTION: A solid-state imaging device includes, on a semiconductor substrate 11: a pixel portion 12 provided with a photoelectric conversion portion 21 for photoelectrically converting incident light to obtain an electric signal; and a peripheral circuit portion 13 disposed on the periphery of the pixel portion 12. In the solid-state imaging device, a gate insulating film 51 of a MOS transistor 50 in the peripheral circuit portion 13 includes an oxynitride film, a gate insulating film 31 of a MOS transistor 30 in the pixel portion 12 includes an oxynitride film, and an oxide film is formed just above the photoelectric conversion portion 21 in the pixel portion 12. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
