| 摘要 |
<p>A memory device comprising a plurality of row lines (1) disposed in parallel with each other, a plurality of column lines (2) disposed in parallel with each other and in a crosswise direction with respect to the row lines (1), and memory cells (3) disposed at respective intersections between the row lines (1) and the column lines (2), each of the cells comprising a resistance change element (11) and a diode (12) which is serially connected to the resistance change element (11). The diode (12) comprises laminated layers of a first semiconductor region (16) containing an impurity of a first conductivity type, a second semiconductor region (18) containing an impurity of the first conductivity type in a lower concentration than that in the first semiconductor region (16), and a third semiconductor region (17) containing an impurity of a second conductivity type, wherein the second semiconductor region (18) includes a section in which the impurity concentration is higher than the concentrations in a first section which is adjacent to the third semiconductor region (17) and in a second section which is adjacent to the first semiconductor region (16).</p> |
