| 摘要 |
<p>PURPOSE: A method for forming a fine pattern in a semiconductor device is provided to form a fine pattern with a line-width of 40nm or less by forming a second pattern with double patterning technology process. CONSTITUTION: A hard mask layer(32), an etching barrier layer and a photosensitive pattern are successively formed on a layer to be etched(31). A first pattern is formed by etching the etching barrier layer with the photosensitive pattern as an etching barrier. The first pattern is selectively etched to form a second pattern(33B). A hard mask pattern is formed by etching the hard mask with the second pattern as the etching barrier. The layer to be etched is etched using the hard mast pattern as the etching barrier. The second pattern includes a bisymmetry profile.</p> |
