| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic power device for attaining high power-generation efficiency by reducing a serial resistance and reducing the deterioration of a fill factor, and to provide a method for manufacturing the device. SOLUTION: The photovoltaic power device includes: a P-type silicon substrate 11 being the first conductivity type semiconductor substrate; an N-type diffusion layer 12 being the second conductivity type impurity material diffusion layer formed on the semiconductor substrate; and a plurality of grid electrodes 15 being linear electrodes formed on the impurity material diffusion layer. The impurity material diffusion layer includes: a high concentration N-type diffusion layer 13 being the first diffusion layer; and a low concentration N-type diffusion layer 14 being the second diffusion layer arranged in the circumference of the first diffusion layer and having the impurity material concentration lower than that of the first diffusion layer. The first diffusion layer has a grid shape obtained by combining a linear shape along the first direction with a linear shape along the second direction to be substantially orthogonally crossed with the first direction. The linear electrodes are arranged by superimposition on an area along the first direction or second direction of the first diffusion layer out of the first and second diffusion layers. COPYRIGHT: (C)2010,JPO&INPIT |
