摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device of a top emission type wherein deterioration of conductivity of a light emitting element is suppressed. SOLUTION: The light emitting device is provided with a first substrate 10, a light reflecting layer 14 formed on the first substrate 10, a pixel electrode 16 formed on the light reflecting layer 14, a light emitting functional layer 18 formed on the pixel electrode 16, an electron injection layer 20 formed on the light emitting functional layer 18, and a counter electrode 22 formed on the electron injection layer 20 and having half-transmission reflexibility. The counter electrode 22 is formed of Ag alloy and the Ag content is so set up that a resistance ratio of the counter electrode 22 may become 31×10<SP>-8</SP>Ωm or less. COPYRIGHT: (C)2010,JPO&INPIT
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