发明名称 LIGHT EMITTING DEVICE AND ELECTRONIC UNIT, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a light emitting device of a top emission type wherein deterioration of conductivity of a light emitting element is suppressed. SOLUTION: The light emitting device is provided with a first substrate 10, a light reflecting layer 14 formed on the first substrate 10, a pixel electrode 16 formed on the light reflecting layer 14, a light emitting functional layer 18 formed on the pixel electrode 16, an electron injection layer 20 formed on the light emitting functional layer 18, and a counter electrode 22 formed on the electron injection layer 20 and having half-transmission reflexibility. The counter electrode 22 is formed of Ag alloy and the Ag content is so set up that a resistance ratio of the counter electrode 22 may become 31×10<SP>-8</SP>Ωm or less. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010055919(A) 申请公布日期 2010.03.11
申请号 JP20080219266 申请日期 2008.08.28
申请人 SEIKO EPSON CORP 发明人 KOBAYASHI HIDEKAZU;SHIRATORI YUKIYA
分类号 H05B33/28;C23C14/14;H01L51/50;H05B33/10;H05B33/22;H05B33/24;H05B33/26 主分类号 H05B33/28
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