| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering system improved in a film thickness distribution by arranging a gas jet tube is arranged around a cathode case housing a cathode, thereby spreading a process gas uniformly near the center of a substrate. Ž<P>SOLUTION: Among three magnetron cathodes, the cathodes 54a, 54c on both the sides are fitted to a vacuum vessel 32 in such a manner that their angles can be adjusted. After the inside of the vacuum vessel 32 is exhausted to 1×10^4 Pa, a process gas (a gaseous mixture of argon and oxygen) 88 is introduced from a gas jet tube 82 belonging to the cathode case 50. In total, the flow rate of the argon gas is set to 120SCCM and the flow rate of the oxygen gas is set to 90SCCM, and the pressure at the inside of the vacuum vessel is set to 0.7 Pa. Direct current power of 1 kW is fed from respective direct current power sources 72 to the cathodes 54a, 54b, 54c, and a target 78 made of chromium is sputtered, so as to form a chromium oxide thin film on a substrate 10. When a film thickness of 200 nm is obtained, a film thickness distribution reaches ±4%. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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