| 摘要 |
PURPOSE: A method for manufacturing the device isolation structure of a semiconductor device is provided to prevent the generation of a void by embedding a plurality of trenches through a selective oxide(SELOX) formation process in order to form the device isolation structure. CONSTITUTION: A material layer(110) in which an oxide layer(111) and a nitride layer(112) are successively stacked on a substrate(100) is formed. A pad pattern for defining a plurality of device isolation areas is formed on the material layer. A plurality of trenches(140) with different depths is formed using the pad pattern as an etching mask. In order to form a device isolation structure, the trenches are embedded by a SELOX formation process. An oxide film formed on the material layer is removed.
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