| 摘要 |
PURPOSE: An oxide layer removal method is provided to eliminate a slurry and a residue generated in an oxide layer by removing an additional underpolishing part by automatically controlling concentration of the DHF(Dilyted HF). CONSTITUTION: A wafer(100) is cleaned and dried by using a roller brush(300) by supplying a DIW(Deionized Water). The thickness of an oxidation layers on the nitride film of the active area of the wafer is measured. The existence of a target and an underpolishing are identified. A DHF wet etch process and a first cleaning process of the wafer are executed when the oxide layer is determined to the underpolishing. The thickness of the oxidation layer on the nitride film is measured again after the second wash and drying process of the wafer. The first and the second cleaning process repetitively is executed when the oxide layer is determined to the underpolishing. The cleaning process is stopped when it is not underpolishing.
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