| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a semiconductor film of such a crystallinity as the crystal faces parallel with the film surface are arranged and crystal orientations of each grain is also arranged. <P>SOLUTION: When the film is irradiated with an energy beam of a specified energy density, crystal silicon where (100) face is oriented preferentially in parallel with the film surface is produced. Subsequently, a semiconductor film 43 is irradiated with an energy beam C for fusing a semiconductor film 43 while scanning in a specified direction D using the crystal silicon as crystal seed thus growing a crystal having substantial [001] orientation in the energy scanning direction. In the method for forming a semiconductor film, the crystal face parallel with the film face is a substantial (100) face and grains having crystal orientations arranged in the substantial [001] orientation can be formed. <P>COPYRIGHT: (C)2004,JPO</p> |
