发明名称 |
METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME |
摘要 |
An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.
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申请公布号 |
US2010052169(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090486124 |
申请日期 |
2009.06.17 |
申请人 |
LEE NAM YEAL;YEOM SEUNG JIN;KIM BAEK MANN;JUNG DONG HA;OH JOON SEOK |
发明人 |
LEE NAM YEAL;YEOM SEUNG JIN;KIM BAEK MANN;JUNG DONG HA;OH JOON SEOK |
分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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