| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same which increase a breakdown voltage by having an embedded layer on an interface between a semiconductor substrate and an epilayer formed on the semiconductor substrate. <P>SOLUTION: The semiconductor device includes second conductive high density regions 21a, 21b which are embedded in a surface of a second conductive element forming region 12 formed on a first conductive semiconductor layer 11, surround a semiconductor element formed on the second conductive element forming region 12, and are formed by separating from the first conductive element separation region 23 for separating the semiconductor element. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
