发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≰x≰1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
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申请公布号 |
US2010055819(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090507539 |
申请日期 |
2009.07.22 |
申请人 |
OHBA YASUO;KANEKO KEI;GOTODA TORU;KATSUNO HIROSHI;KUSHIBE MITSUHIRO |
发明人 |
OHBA YASUO;KANEKO KEI;GOTODA TORU;KATSUNO HIROSHI;KUSHIBE MITSUHIRO |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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