| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer 10, which is used for a backside illuminated solid-state imaging device 100 comprising a plurality of pixels 70 including a photoelectric conversion element 50 and a charge transfer transistor 60 disposed on a surface 40a side, and a back surface 20a as a light receiving surface, that is a method of manufacturing the backside illuminated solid-state imaging device for effectively suppressing generation of white defects and heavy metal contamination. <P>SOLUTION: An active layer 30 formed of a predetermined epitaxial film is formed on a silicon wafer 20 formed of CZ crystals containing C directly or through an insulating film. Then, predetermined heat treatment is applied to form deposit 40 containing C and O as a gettering sink just beneath the active layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
