发明名称 |
HIGH-K METAL GATE STRUCTURE INCLUDING BUFFER LAYER |
摘要 |
A high-k metal gate structure including a buffer layer and method of fabrication of such, is provided. The buffer layer may interpose an interface oxide layer and a high-k gate dielectric layer. In one embodiment, the buffer layer includes aluminum oxide. The buffer layer and the high-k gate dielectric layer may be formed in-situ using an atomic layer deposition (ALD) process.
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申请公布号 |
US2010052077(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090422378 |
申请日期 |
2009.04.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU PENG-FU;KO HSIN-CHUN;LIN KANG-CHENG;HUANG KUO-TAI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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